Abstract:SRAM plays an important role in achieving high computational speed in digital systems. Its fast access times, low latency, random access, and high reliability make it an essential component in modern digital systems. Due to its higher speed, it is commonly used in cash memory and realtime processing. However, as the size of the cache memory increases, the on-chip area requirement also increases. This can become a significant design challenge, especially for highperformance microprocessors and ASICs that require large amounts of cache memory. Thus, to address this challenge, designers need to optimize the size of the SRAM arrays used for cache memory while maintaining performance and stability. To meet all these requirements, designers have been focusing on the sub-micron level. So, this paper is dedicated to investigating the performance and stability of 6T SRAM cells in the deep sub-micron regime. It has been observed that the SRAM cell designed for the 22nm technology node has 92.0% less power dissipation, consumes 87.7% less area, and has 88.0% less delay in comparison to the 180nm node. Whereas the static noise margin (SNM) becomes worse at lower technology nodes. In addition, the stability of the SRAM cell has also been analyzed in terms of process corner analysis. The corner analysis reveals that the SF and FF are the best corners for optimum performance of the SRAM cell. We also realized the SRAM 64X64 (4Kb) memory array on 180nm and 45nm technology nodes. The memory arrays realized on 180nm consume 37.23 mW of power during read and write operations. Whereas the array designed on a 45nm technology node consumes 8.85 mW of power in read and write cycles, respectively.

Measurement of SRAM Standby Leakage under Advanced Logic Process

A novel method for accurate measurement and decoupling of SRAM standby leakage

SRAM Standby Leakage Decoupling Analysis for Different Leakage Reduction Techniques

A Leakage Current Suppression Technique for Cascade SRAM Array in 55 Nm CMOS Technology

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins

The Study and Test Method of SRAM Conventional Static Characteristics in 65 Nm Process Technology

Ultra8T: A Sub-Threshold 8T SRAM with Leakage Detection

Large-Scale SRAM Variability Characterization in 45 nm CMOS

A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

Leakage Power Analysis and Estimation in SRAMs

Mechanism and Application of NMOS Leakage with Intra-Well Isolation Breakdown by Voltage Contrast Detection

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies

Novel 15T SRAM Cell for Low Voltage High Reliability Application

Statistical analysis of full-chip leakage power for 65nm CMOS node and beyond

Analyzing the Performance of 6T SRAM Cell and 64×64 Memory Array at Lower Technology Nodes for Low Power Design

An Efficient Optimization Based Method to Evaluate the DRV of SRAM Cells

Low-Power High-Yield Sram Design With Vss Adaptive Boosting And Bl Capacitance Variation Sensing

The detection and investigation of SRAM data retention soft failures by voltage contrast inspection

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique