Abstract:Sub/near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in power-constrained applications. However, the high integration density and reliability under process variations demand an accurate estimation of extremely small failure probabilities. To capture such a “rare event” in memory circuits, the time and storage overhead of conventional simulations based on the Monte Carlo (MC) analysis cannot be tolerated. On the other hand, classic analytical methods predicting failure probabilities from a physical expression become inaccurate in the sub/near-threshold voltage domain due to the hypothetical distribution or the oversimplified drain current ( $I_{ds}$ ) model for nanoscale devices. This work first proposes a simple but efficient empirical $I_{ds}$ model to describe the drain-induced barrier lowering (DIBL) effect. Based on that, the probability density functions of the interest metrics in SRAM are derived. Two analytical models are then put forward to evaluate SRAM dynamic stabilities, including the access time failure and the write failure. The proposed models can be extended easily to different types of SRAM with different read/write-assist circuits. The models are validated against MC simulations across different operating voltages and temperatures. The average relative errors at 0.5-V $V_{\mathrm{ DD}}$ are only 8.8% for the access-time failure model and 10.4% for the write failure model. The size of the required sample data set is $43.6\times $ smaller than that of the state-of-the-art method.

An Efficient Optimization Based Method to Evaluate the DRV of SRAM Cells

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model

A Timing Yield Model for SRAM Cells at Sub/Near-Threshold Voltages Based on a Compact Drain Current Model

Yield Driven Design and Optimization for Near Threshold Voltage Sram Cells

An Accurate and Efficient Yield Analysis for SRAM Dynamic Metrics Using Differential Evolution Algorithm

An Efficient and Robust Yield Optimization Method for High-dimensional SRAM Circuits.

An Efficient SRAM Yield Analysis and Optimization Method with Adaptive Online Surrogate Modeling

An Efficient SRAM Yield Analysis Method using Multi -Fidelity Neural Network

Seeking the Yield Barrier: High-Dimensional SRAM Evaluation Through Optimal Manifold

Efficient Yield Analysis for SRAM and Analog Circuits using Meta-Model based Importance Sampling Method

Importance Boundary Sampling for SRAM Yield Analysis with Multiple Failure Regions

Efficient SRAM yield optimization with mixture surrogate modeling

An Efficient Adaptive Importance Sampling Method for SRAM and Analog Yield Analysis

Variation Aware Evaluation Approach and Design Methodology for SOT-MRAM

High-Dimensional and Multiple-Failure-Region Importance Sampling for Sram Yield Analysis

Physical Modeling of Bitcell Stability in Subthreshold SRAMs for Leakage-Area Optimization under PVT Variations.

Measurement of SRAM Standby Leakage under Advanced Logic Process

Rapid Estimation of the Probability of SRAM Failure Via Adaptive Multi-Level Sliding-Window Statistical Method.

An Efficient Non-Gaussian Sampling Method for High Sigma SRAM Yield Analysis

SRAM Standby Leakage Decoupling Analysis for Different Leakage Reduction Techniques