Abstract:Sub/Near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in energy-constrained applications. However, the high integration density and reliability under process variations demand an accurate estimation of extremely small failure probabilities. To capture such a rare event in memory circuits, the time and storage overhead of conventional Monte Carlo (MC) simulations cannot be tolerated. On the other hand, classic analytical methods predicting failure probabilities from a physical expression become inaccurate in the sub/near-threshold region due to the assumed distribution or the oversimplified drain current model for nanoscale devices. This work first proposes a simple but efficient drain current model to describe the drain-induced barrier lowering effect at low voltages. Based on that, the probability density functions of the interest metrics in SRAM are derived. Two analytical models are then put forward to evaluate SRAM dynamic stabilities including access and write-time failures. The proposed models can be extended easily to different types of SRAM with different read/write assist circuits. The models are validated against MC simulations across different operating voltages and temperatures. The average relative errors at 0.5V VDD are only 8.8% and 10.4% for the access-time and write failure models respectively. The size of required data samples is 43.6X smaller than that of the state-of-the-art method.

An Efficient SRAM Yield Analysis and Optimization Method with Adaptive Online Surrogate Modeling

Efficient SRAM yield optimization with mixture surrogate modeling

Efficient Importance Sampling for High-Sigma Yield Analysis with Adaptive Online Surrogate Modeling

An Efficient and Robust Yield Optimization Method for High-dimensional SRAM Circuits.

An Efficient Non-Gaussian Sampling Method for High Sigma SRAM Yield Analysis

An Efficient SRAM Yield Analysis Method using Multi -Fidelity Neural Network

Yield Driven Design and Optimization for Near Threshold Voltage Sram Cells

Seeking the Yield Barrier: High-Dimensional SRAM Evaluation Through Optimal Manifold

Importance Boundary Sampling for SRAM Yield Analysis with Multiple Failure Regions

An Efficient Bayesian Yield Estimation Method for High Dimensional and High Sigma SRAM Circuits.

Efficient Bayesian Yield Optimization Approach for Analog and SRAM Circuits

Bayesian Methods for the Yield Optimization of Analog and SRAM Circuits

An Accurate and Efficient Yield Analysis for SRAM Dynamic Metrics Using Differential Evolution Algorithm

Efficient Yield Analysis for SRAM and Analog Circuits using Meta-Model based Importance Sampling Method

Rapid Estimation of the Probability of SRAM Failure Via Adaptive Multi-Level Sliding-Window Statistical Method.

Efficient Yield Optimization for Analog and SRAM Circuits Via Gaussian Process Regression and Adaptive Yield Estimation

An Efficient Adaptive Importance Sampling Method for SRAM and Analog Yield Analysis

Technology of Design to Optimize SRAM for Higher Yield

A systematic design methodology for yield-driven near-threshold SRAM design

A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model

OPT: Optimal Proposal Transfer for Efficient Yield Optimization for Analog and SRAM Circuits