Abstract:Sub/near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in power-constrained applications. However, the high integration density and reliability under process variations demand an accurate estimation of extremely small failure probabilities. To capture such a “rare event” in memory circuits, the time and storage overhead of conventional simulations based on the Monte Carlo (MC) analysis cannot be tolerated. On the other hand, classic analytical methods predicting failure probabilities from a physical expression become inaccurate in the sub/near-threshold voltage domain due to the hypothetical distribution or the oversimplified drain current ( $I_{ds}$ ) model for nanoscale devices. This work first proposes a simple but efficient empirical $I_{ds}$ model to describe the drain-induced barrier lowering (DIBL) effect. Based on that, the probability density functions of the interest metrics in SRAM are derived. Two analytical models are then put forward to evaluate SRAM dynamic stabilities, including the access time failure and the write failure. The proposed models can be extended easily to different types of SRAM with different read/write-assist circuits. The models are validated against MC simulations across different operating voltages and temperatures. The average relative errors at 0.5-V $V_{\mathrm{ DD}}$ are only 8.8% for the access-time failure model and 10.4% for the write failure model. The size of the required sample data set is $43.6\times $ smaller than that of the state-of-the-art method.

Yield Driven Design and Optimization for Near Threshold Voltage Sram Cells

Design Time Body Bias Selection for Parametric Yield Improvement.

An Efficient and Robust Yield Optimization Method for High-dimensional SRAM Circuits.

An Efficient SRAM Yield Analysis and Optimization Method with Adaptive Online Surrogate Modeling

A systematic design methodology for yield-driven near-threshold SRAM design

Bayesian Methods for the Yield Optimization of Analog and SRAM Circuits

Efficient Yield Optimization for Analog and SRAM Circuits Via Gaussian Process Regression and Adaptive Yield Estimation

Efficient SRAM yield optimization with mixture surrogate modeling

Efficient Bayesian Yield Optimization Approach for Analog and SRAM Circuits

An Efficient SRAM Yield Analysis Method using Multi -Fidelity Neural Network

Yield Improvement Methodology with Addressing Design Systematics During Production Ramp-up

An Efficient Optimization Based Method to Evaluate the DRV of SRAM Cells

Technology of Design to Optimize SRAM for Higher Yield

A near-threshold SRAM design with transient negative bit-line voltage scheme

A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model

Near-Threshold Sram Design On 40-Nm Cmos Technology For Low Power Design

A Yield-Enhanced Global Optimization Methodology for Analog Circuit Based on Extreme Value Theory

Seeking the Yield Barrier: High-Dimensional SRAM Evaluation Through Optimal Manifold

Optimization of SRAM cell by utilizing reverse short channel and reverse narrow channel effect

A Timing Yield Model for SRAM Cells at Sub/Near-Threshold Voltages Based on a Compact Drain Current Model

Optimization of Repairing Embedded SRAM and its Application