Abstract:Analog compute-in-memory (CIM) in static random-access memory (SRAM) is promising for accelerating deep learning inference by circumventing the memory wall and exploiting ultra-efficient analog low-precision arithmetic. Latest analog CIM designs attempt bit-parallel schemes for multi-bit analog Matrix-Vector Multiplication (MVM), aiming at higher energy efficiency, throughput, and training simplicity and robustness over conventional bit-serial methods that digitally shift-and-add multiple partial analog computing results. However, bit-parallel operations require more complex analog computations and become more sensitive to well-known analog CIM challenges, including large cell areas, inefficient and inaccurate multi-bit analog operations, and vulnerability to PVT variations. This paper presents PICO-RAM, a PVT-insensitive and compact CIM SRAM macro with charge-domain bit-parallel computation. It adopts a multi-bit thin-cell Multiply-Accumulate (MAC) unit that shares the same transistor layout as the most compact 6T SRAM cell. All analog computing modules, including digital-to-analog converters (DACs), MAC units, analog shift-and-add, and analog-to-digital converters (ADCs) reuse one set of local capacitors inside the array, performing in-situ computation to save area and enhance accuracy. A compact 8.5-bit dual-threshold time-domain ADC power gates the main path most of the time, leading to a significant energy reduction. Our 65-nm prototype achieves the highest weight storage density of 559 Kb/mm${^2}$ and exceptional robustness to temperature and voltage variations (-40 to 105 $^{\circ}$C and 0.65 to 1.2 V) among SRAM-based analog CIM designs.

Nonlinear Quantization for In-Sram Multi-Bit MAC Design

The Impact of Non-linear NVM Devices on In-Memory Computing

In-Memory Multi-Bit Multiplication and Accumulation (MAC) Using FeFET for Energy Efficient IoT

A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications

Linearity Analysis for Charge Domain In-memory Computing.

A Multi-Bit Quantization Low-Latency Voltage Sense Amplifier Applied in RRAM Computing-in-Memory Macro Circuits

Charge-Domain Static Random Access Memory-Based In-Memory Computing with Low-Cost Multiply-and-Accumulate Operation and Energy-Efficient 7-Bit Hybrid Analog-to-Digital Converter

A Dual-Wordline 6T SRAM Computing-In-Memory Macro Featuring Full Signed Multi-Bit Computation for Lightweight Networks

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation

15.5 A 28nm 64Kb 6T SRAM Computing-in-Memory Macro with 8b MAC Operation for AI Edge Chips

A Brain-Inspired ADC-Free SRAM-Based In-Memory Computing Macro with High-Precision MAC for AI Application

A Reconfigurable SRAM Computing-in-Memory Macro Supporting Ping-Pong Operation and CIM Pipeline for Multi-mode MAC Operations

PICO-RAM: A PVT-Insensitive Analog Compute-In-Memory SRAM Macro with In-Situ Multi-Bit Charge Computing and 6T Thin-Cell-Compatible Layout

A Computing-in-Memory SRAM Macro Based on Fully-Capacitive-Coupling With Hierarchical Capacity Attenuator for 4-b MAC Operation

Quantization Design for Resistive Memories With Multiple Reads

A Computing In-Memory Multibit Multiplication Based on Decoupling and In-Array Storing

A High-Density and Reconfigurable SRAM-Based Digital Compute-In-Memory Macro for Low-Power AI Chips.

Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System