Abstract:Spin-orbit torque magnetic random access memory (SOT-MRAM), which exhibits sub-nanosecond write speed and high reliability, is a promising candidate for the future high-level cache. However, SOT-MRAM faces the problem of large bit-cell layout area due to its structural characteristics and write performance requirements, therefore it is necessary to explore the bit-cell design with optimal overall performance under the unified bit-cell area. In this paper, we propose a comprehensive variation aware evaluation approach for the area, latency, and energy of SOT-MRAM under the uniform yield standard. Based on this, the mainstream SOT-MRAM bit-cell designs with high-density method and multi-finger configuration are evaluated, meanwhile bit-cell designs with excellent write performance and their optimum area ranges are identified. Moreover, the source line read (SLR) mode with higher robustness against transistor variation is proposed to improve the read performance, and the dual SL (DSL) method is proposed to further reduce the read latency and write energy. With the DSL method, the read latency and write energy of 2-word-line (WL)-type bit-cells can be reduced by up to 36.5% and 12.6%, respectively. In addition, the DSL method can solve the shunt current issue of 1WL-type bit-cells and reduce the read latency and write energy by up to 43.6% and 17.4%, respectively.

A Novel Test Methodology For Design Of An Embedded Synchronous Dual-Read/Write Port Sram With Configurable Capacity

A Fully Automated Large-Scale Addressable Test Chip Design with High Reliability

An improved method for test chip design

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

A heterogeneous design methodology for STT-RAM memory system of mobile SoC

An Effective Test Method for Block RAMs in Heterogeneous FPGAs Based on a Novel Partial Bitstream Relocation Technique

Design of an Embedded High Speed Dual-Port SRAM in Display Control/Driver ICs

A High Performance Embedded Sram Compiler

Design of a Novel High Speed Embedded DRAM

Hybrid CMOS/Memristor Circuit Design Methodology

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

A 65nm Embedded Low Power SRAM Compiler

Design of Generic Embedded Memory Built in Self Test Circuit

Optimization of Embedded SRAM for Low Power and Testing

A Robust Dual Reference Computing-in-Memory Implementation and Design Space Exploration Within STT-MRAM

Development of A Deep Submicrometer Embedded Sram Compiler

Design of 512-Kbit Synchronous High-speed SRAM

A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

Design And Optimization Methodology For 3d Rram Arrays

Variation Aware Evaluation Approach and Design Methodology for SOT-MRAM

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier