Abstract:Static random access memories (SRAM) are useful building blocks in various applications, including cache memories, integrated data storage systems, and microprocessors. The von Neumann bottleneck difficulties are solved by in-memory computing. It eliminates unnecessary frequent data transfer between memory and processing units simultaneously. In this research, the replica-based 10T SRAM design for in-memory computing (IMC) is designed by adapting the word line control scheme in 14nm CMOS technology. In order to achieve high reading and writing capability, the Schmitt trigger inverter was used for energy-saving and stable use. To speed up the writing process of the design, a single transistor is inserted between the cross-coupled inverters. In addition, to increase the node capacity, the voltage boosting circuitry is emphasized. The adaptive word line control scheme was utilized by integrating the replica column based circuit. The Replica approach regulates signal flow through the core by using a dummy column and a dummy row in RAM. To demonstrate the viability of the suggested design, the simulated outcomes are contrasted with those of existing designs. The various performance metrics examined are Read Static Noise Margin (RSNM), Write (WSNM), Hold (HSNM), Read Access Delay (RAD), Write Access Delay (WAD), Read performance and Write performance the varying supply voltage is evaluated.

A High Performance Embedded Sram Compiler

Development of A Deep Submicrometer Embedded Sram Compiler

A 65nm Embedded Low Power SRAM Compiler

A flexible SRAM compiler for embedded application

A flexible embedded SRAM compiler

Design of High-Speed SRAM Array and Peripheral Circuits for Compiler

Design and Implementation of Flexible Embedded SRAM Compiler

An Efficient and Flexible Embedded Memory IP Compiler

An Embedded SRAM IP Compiler Design Methodology Independent of Technology and Circuit Structure

Memory Compiler for RRAM In-Memory Computation

Design of High Performance SRAM Based on Single-Port Sense Amplifier

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

Low-Power Design of High-Performance SRAM

CP-SRAM: charge-pulsation SRAM marco for ultra-high energy-efficiency computing-in-memory

A Novel Test Methodology For Design Of An Embedded Synchronous Dual-Read/Write Port Sram With Configurable Capacity

-Memory Computing Based Reliable and High Speed Schmitt trigger 10T SRAM cell design

Design of 512-Kbit Synchronous High-speed SRAM

CP-SRAM

A 1.23-Ghz 16-Kb Programmable and Generic Processing-in-SRAM Accelerator in 65Nm

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

A 1-Mb Programming Configurable ReRAM Fully Integrating into a 32-Bit Microcontroller Unit.