Abstract:Static random access memories (SRAM) are useful building blocks in various applications, including cache memories, integrated data storage systems, and microprocessors. The von Neumann bottleneck difficulties are solved by in-memory computing. It eliminates unnecessary frequent data transfer between memory and processing units simultaneously. In this research, the replica-based 10T SRAM design for in-memory computing (IMC) is designed by adapting the word line control scheme in 14nm CMOS technology. In order to achieve high reading and writing capability, the Schmitt trigger inverter was used for energy-saving and stable use. To speed up the writing process of the design, a single transistor is inserted between the cross-coupled inverters. In addition, to increase the node capacity, the voltage boosting circuitry is emphasized. The adaptive word line control scheme was utilized by integrating the replica column based circuit. The Replica approach regulates signal flow through the core by using a dummy column and a dummy row in RAM. To demonstrate the viability of the suggested design, the simulated outcomes are contrasted with those of existing designs. The various performance metrics examined are Read Static Noise Margin (RSNM), Write (WSNM), Hold (HSNM), Read Access Delay (RAD), Write Access Delay (WAD), Read performance and Write performance the varying supply voltage is evaluated.

Design of High-Speed SRAM Array and Peripheral Circuits for Compiler

A High Performance Embedded Sram Compiler

Development of A Deep Submicrometer Embedded Sram Compiler

A flexible embedded SRAM compiler

A flexible SRAM compiler for embedded application

Design of 512-Kbit Synchronous High-speed SRAM

A 65nm Embedded Low Power SRAM Compiler

Design of High Performance SRAM Based on Single-Port Sense Amplifier

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

Low-Power Design of High-Performance SRAM

Design and Implementation of Flexible Embedded SRAM Compiler

A 16kbyte SRAM Memory Containing Peripheral Circuit Hardened

An Efficient and Flexible Embedded Memory IP Compiler

A Robust Design of SRAM Sense Amplifier for Submicron Technology

Design and Implement of Low Power Consumption SRAM Based on Single Port Sense Amplifier in 65 Nm

Small Area ROM Design for Embedded Applications

An Embedded SRAM IP Compiler Design Methodology Independent of Technology and Circuit Structure

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

-Memory Computing Based Reliable and High Speed Schmitt trigger 10T SRAM cell design

Design of 6-Port High-speed and Low-power Partitioned Register File

An 8T SRAM Array with Configurable Word Lines for In-Memory Computing Operation