Abstract:The increasing data processing speed and storage volume has urged enhancement in the reliability of flash technology which currently is still the mainstream memory in the embedded field. Despite the process improvement toward the higher-performance flash device, the robustness and reliability of flash reading is also becoming critical which is largely based on the comparison between the cell current and a reference. However, the accuracy of the reference current can be significantly affected by various factors, including location distribution, voltage fluctuation, and stress and temperature effects leading to output error and function failure. In this work, we have designed the reading circuit of 55-nm split-gate SuperFlash for high-reliability applications. Individual memory cells which are partially programmed are selected from the array and are used as current reference cell based on the analysis of cell locations, temperature effects, and so forth. Comparing to the conventional current reference design, our proposed flash reading circuit has exhibited much improved accuracy as well as enhanced endurance and reliability, which can be very instructive for future advanced embedded memory circuit design and optimizations.

Array and High Voltage Path Design for SONOS Flash Memory

180Nm 4mb High Speed High Reliability Embedded SONOS Flash Memory

A High-Performance Wordline Voltage-Generating System for Low-Power Low-Voltage Flash Memory

A Novel Reverse Read Array Architecture for Embedded SONOS Type Flash Memory

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

Design of Reading Circuit for High-Reliability 55-Nm Split-Gate SuperFlash Technology

A 280-Kbytes Twin-Bit-Cell Embedded NOR Flash Memory with a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems

Investigation and three implementations for low power self-aligned 1.5-T SONOS flash device

A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory with A Sensing Current Protection Technique

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Design of High-Speed SRAM Array and Peripheral Circuits for Compiler

High Speed Sense Amplifier Circuit for Low-Voltage SONOS Memory Systems

Fabrication and Characterization of A Novel Fully Self-Aligned Split-Gate Sonos Memory Device

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

A Novel 3D NOR Flash with Single-Crystal Silicon Channel: Devices, Integration, and Architecture

Pure logic CMOS based embedded Non-Volatile Random Access Memory for low power RFID application

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

Novel High-Speed Radiation Hardened Sense Amplifier for SOI Based SONOS Memory