Abstract:The increasing data processing speed and storage volume has urged enhancement in the reliability of flash technology which currently is still the mainstream memory in the embedded field. Despite the process improvement toward the higher-performance flash device, the robustness and reliability of flash reading is also becoming critical which is largely based on the comparison between the cell current and a reference. However, the accuracy of the reference current can be significantly affected by various factors, including location distribution, voltage fluctuation, and stress and temperature effects leading to output error and function failure. In this work, we have designed the reading circuit of 55-nm split-gate SuperFlash for high-reliability applications. Individual memory cells which are partially programmed are selected from the array and are used as current reference cell based on the analysis of cell locations, temperature effects, and so forth. Comparing to the conventional current reference design, our proposed flash reading circuit has exhibited much improved accuracy as well as enhanced endurance and reliability, which can be very instructive for future advanced embedded memory circuit design and optimizations.

A Novel Reverse Read Array Architecture for Embedded SONOS Type Flash Memory

Array and High Voltage Path Design for SONOS Flash Memory

Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

180Nm 4mb High Speed High Reliability Embedded SONOS Flash Memory

Research Progress of SONOS Nonvolatile Memory Device

A Novel 3D NOR Flash with Single-Crystal Silicon Channel: Devices, Integration, and Architecture

A Novel Embedded BeNOR Flash Memory

An 8-Level 3-Bit Cell Programming Technique in Nor-Type Nano-Scaled Sonos Memory Devices

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

A novel combination FN/BBHH erase scheme for scaled SONOS device

A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Fabrication and Characterization of A Novel Fully Self-Aligned Split-Gate Sonos Memory Device

A High Speed Low Power Negative Sensing Architecture for 3d Nand Flash Memory

Investigation and three implementations for low power self-aligned 1.5-T SONOS flash device

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

One-Shot Refresh: A Low-Power Low-Congestion Approach for Dynamic Memories

A Novel Non-Planar Cell Structure for Flash Memory

A Novel Sourceline Voltage Compensation Circuit for Embedded nor Flash Memory

Design of a Novel High Speed Embedded DRAM

Design of Reading Circuit for High-Reliability 55-Nm Split-Gate SuperFlash Technology