Abstract:As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxide-silicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

A novel combination FN/BBHH erase scheme for scaled SONOS device

Optimization of Polysilicon Gate Etching Process in SONOS Memory Fabrication

Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

An 8-Level 3-Bit Cell Programming Technique in Nor-Type Nano-Scaled Sonos Memory Devices

The Promising Multi-Bit/level Programming Operations for Nano-Scaled SONOS Memory

Fabrication and Characterization of A Novel Fully Self-Aligned Split-Gate Sonos Memory Device

Research Progress of SONOS Nonvolatile Memory Device

Investigation and Process Optimization of Sonos Cell'S Drain Disturb in 2-Transistor Structure Flash Arrays

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

Improved performance of Si-NC memory using a novel two-step program scheme

A novel LTPS-TFT-based charge-trapping memory device with field-enhanced nanowire structure

Stacked Si Nanosheets Gate-All-Around Transistors with Silicon-on-Nothing Structure for Suppressing Parasitic Effects and Improving Circuits' Performance

A Novel Structure for Improving Erase Performance of Vertical Channel NAND Flash With an Indium-Gallium-Zinc-Oxide Channel

A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric

Erase Efficiency Improvement of Ferroelectric FET with IGZO Channel by P-Type SnOx Layer

A Novel Dual-Bbhh Erasing Scheme To Improve Endurance And Retention Performances For Localized Charge Trapping Memories

180Nm 4mb High Speed High Reliability Embedded SONOS Flash Memory

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Progress of High-K Dielectrics Applicable to Sonos-Type Nonvolatile Semiconductor Memories

A Novel Reverse Read Array Architecture for Embedded SONOS Type Flash Memory

Total Dose Characteristics of Single Poly EEPROM and SONOS EEPROM on SOI