Abstract:Devices based on charge trapping are a promising solution for Flash memory scaling. The nonconductivity of their storage medium makes them more robust with respect to data loss by charge leakage through the bottom oxide, which, on the contrary sets a hard limit to floating-gate Flash scalability. Their simple processing, highly compatible with CMOS, makes them rapidly integrable into short-term solutions. The well-known SONOS concept however, still suffers from insufficient data throughput and retention. On the other hand, the recently proposed NROM concept, storing two bits in a cell, offers very interesting characteristics by using hot carrier based program/erase operations. However, important drawbacks remain, like insufficient isolation of the bits for scalability, high-power programming, and degradation of the retention after cycling. In this paper, we present a dual-bit trapping device which solves most of these problems by using a split-gate structure which was inspired by the HIMOS concept. The device has a fully self-aligned structure which allows for both bits to be physically isolated in the cell. Those features make it very scalable. Programming can be performed by the very efficient source-side injection mechanism, while erase is done by injection of band-to-band tunneling induced hot holes, which compensate for the trapped electrons. This leads to performances comparable to NROM but with lower power consumption, and lower operating voltages.

A Novel Dual-Bbhh Erasing Scheme To Improve Endurance And Retention Performances For Localized Charge Trapping Memories

A novel internal field enhanced retention degradation model for localized charge trapping memory device

Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

Simulation on endurance characteristic of charge trapping memory

Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory Devices

Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory

Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

A Probe of Reliability Issues of Oxide Electrolyte Based CBRAM

A Semi‐Floating Memory with 535% Enhancement of Refresh Time by Local Field Modulation

Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on Wse2

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip

A novel solution to improve static and dynamic retention characteristics by enhancing hydrogen passivation with in situ LD-TEOS/TEOS dual layer

Data Pre-Emphasis Based Retention Reliability Enhance Scheme For Mlc Nand Flash Memories

Distribution and Impact of Local Trapped Charges in SONOS Memory

Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention

Band-Alignment Dominated Retention Behaviors In High-K Composite Charge-Trapping Memory Devices

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Lateral Migration‐based Flash‐like Synaptic Device for Hybrid Off‐chip/On‐chip Training