Abstract:Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state nonvolatile memory technologies that could potentially be used to construct SCM, flash memory is a well-established technology and have been widely used in commercially available SCM incarnations. Flash-based SCM enables much better tradeoffs between performance, space and power than disk-based systems. However, write endurance is a significant challenge for a flash-based SCM (each act of writing a bit may slightly damage a cell, so one flash cell can be written 10^4--10^5 times, depending on the flash technology, before it becomes unusable). This is a well-documented problem and has received a lot of attention by manufactures that are using some combination of write reduction and wear-leveling techniques for achieving longer lifetime. In an effort to improve flash lifetime, first, by quantifying data longevity in an SCM, we show that a majority of the data stored in a solid-state SCM do not require long retention times provided by flash memory (i.e., up to 10 years in modern devices); second, by exploiting retention time relaxation, we propose a novel mechanism, called Dense-SLC (D-SLC), which enables us perform multiple writes into a cell during each erase cycle for lifetime extension; and finally, we discuss the required changes in the flash management software (FTL) in order to use this characteristic for extending the lifetime of the solid-state part of an SCM. Using an extensive simulation-based analysis of a flash-based SCM, we demonstrate that D-SLC is able to significantly improve device lifetime (between 5.1X and 8.6X) with no performance overhead and also very small changes at the FTL software.

Data Pre-Emphasis Based Retention Reliability Enhance Scheme For Mlc Nand Flash Memories

LSB Page Refresh Based Retention Error Recovery Scheme for MLC NAND Flash

MLC nand flash retention error recovery scheme through word line program disturbance

Experimental Characterization, Optimization, and Recovery of Data Retention Errors in MLC NAND Flash Memory

Word line program disturbance based data retention error recovery strategy for MLC NAND Flash

Modeling Retention Errors of 3D NAND Flash for Optimizing Data Placement

Polar-Coded Forward Error Correction for MLC NAND Flash Memory Polar FEC for NAND Flash Memory

Bilayer LDPC Codes Combined with Perturbed Decoding for MLC NAND Flash Memory

Performance Enhancement of NAND Flash Using Unequal Error Protection.

Enhancing the Reliability of MLC NAND Flash Memory Systems by Read Channel Optimization

Study of a Phenomenon of High Error WL in Mixed Read and Program Operations in 3-D NAND Flash

Data-Aware 3-D TLC NAND flash Memory Reliability Optimization

Impact Of Self-Heating Effect On The Retention Of 3-D Nand Flash Memory

Reliability Improvement in Vertical NAND Flash Cells Using Adaptive Incremental Step Pulse Programming (A-ISPP) and Incremental Step Pulse Erasing (ISPE)

Interleaved LDPC Decoding Scheme Improves 3-D TLC NAND Flash Memory System Performance

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

Design Of Almost-Nonvolatile Embedded Dram Using Nanoelectromechanical Relay Devices

Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities

Exploiting Data Longevity for Enhancing the Lifetime of Flash-based Storage Class Memory

The Method of Predicting Retention Threshold Voltage Distribution for NAND Flash Memory Based on Back-Propagation Neural Network

MScache: A buffer management scheme based on page-level address mapping for NAND-flash SSD