Abstract:This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future potential. Retention errors, caused by charge leakage over time, are the dominant source of flash memory errors. Understanding, characterizing, and reducing retention errors can significantly improve NAND flash memory reliability and endurance. In this work, we first characterize, with real 2Y-nm MLC NAND flash chips, how the threshold voltage distribution of flash memory changes with different retention ages -- the length of time since a flash cell was programmed. We observe from our characterization results that 1) the optimal read reference voltage of a flash cell, using which the data can be read with the lowest raw bit error rate (RBER), systematically changes with its retention age, and 2) different regions of flash memory can have different retention ages, and hence different optimal read reference voltages. Based on our findings, we propose two new techniques. First, Retention Optimized Reading (ROR) adaptively learns and applies the optimal read reference voltage for each flash memory block online. The key idea of ROR is to periodically learn a tight upper bound of the optimal read reference voltage, and from there approach the optimal read reference voltage. Our evaluations show that ROR can extend flash memory lifetime by 64% and reduce average error correction latency by 10.1%. Second, Retention Failure Recovery (RFR) recovers data with uncorrectable errors offline by identifying and probabilistically correcting flash cells with retention errors. Our evaluation shows that RFR essentially doubles the error correction capability.

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Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory

Modeling Retention Errors of 3D NAND Flash for Optimizing Data Placement

Exploiting Asymmetric Errors for LDPC Decoding Optimization on 3D NAND Flash Memory

Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories

Read Disturb Errors in MLC NAND Flash Memory

Experimental Characterization, Optimization, and Recovery of Data Retention Errors in MLC NAND Flash Memory

Architectural Techniques for Improving NAND Flash Memory Reliability

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors

PVSensing: A Process-Variation-Aware Space Allocation Strategy for 3D NAND Flash Memory

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

MLC nand flash retention error recovery scheme through word line program disturbance

Channel Modeling and Quantization Design for 3D NAND Flash Memory

Interleaved LDPC Decoding Scheme Improves 3-D TLC NAND Flash Memory System Performance

Error Characterization, Mitigation, and Recovery in Flash Memory Based Solid-State Drives

Monitor Units Assisted LDPC Decoding Algorithm Based on Page BER Variation of 3D NAND Flash Memory

Investigation of Endurance Characteristics in 3-D NAND Flash Memory With Trap Profile Analysis

Error Correction for NOR Memory Devices with Exponentially Distributed Read Noise

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip

Rate-Adaptive Protograph LDPC Codes for Multi-Level-Cell NAND Flash Memory.

Word line program disturbance based data retention error recovery strategy for MLC NAND Flash