Abstract:As NAND flash evolved from two-dimensional (2D) to three-dimensional (3D), all cells have been changed to share a charge trap layer (CTL). This change has a lateral charge spreading effect, which is the trapped charge spreading laterally. This lateral charge spreading effect causes a major problem in NAND flash reliability. In this study, we introduce a new structure that can improve lateral charge spreading by defining a new parameter called 'intercell CTL thickness' and modifying the CTL structure in the WL spaces. When the intercell CTL thickness decreases, the ISPP slope remains relatively constant up to a certain thickness, indicating that program efficiency does not decrease until that critical point. However, as the intercell CTL thickness decreases, the current also decreases, which can be explained by the screen effect and dielectric constant reduction. As for the thickness of the CTL, which is the trap nitride thickness, it decreases while the oxide thickness increases. As a result, it causes a decrease in the total dielectric constant, resulting a decrease in cell current. In addition, as the physical CTL thickness decreases, more charges will be trapped in the same condition. More charges strengthen the screen effect on the electric field, causing a decrease in cell current. In this study, we will discuss the retention characteristics of this novel structure, investigate the window characteristics between lateral charge spreading with cell current, and propose the optimal point.

Investigation of Endurance Characteristics in 3-D NAND Flash Memory With Trap Profile Analysis

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash

Study of a Phenomenon of High Error WL in Mixed Read and Program Operations in 3-D NAND Flash

Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors

Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory

A New 3D NAND Flash Structure to Improve Program/erase Operation Speed

Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory

Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime

Impact Of Self-Heating Effect On The Retention Of 3-D Nand Flash Memory

Impact of low temperature on the TSG Vt shift during erase cycling of 3-D NAND Flash memory