Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory

Yeeun Kim,Seul Ki Hong,Jong Kyung Park

DOI: https://doi.org/10.3390/electronics13061020

IF: 2.9

2024-03-09

Electronics

Abstract:This paper presents an innovative approach to alleviate Z-interference in 3D NAND flash memory by proposing an optimized confined nitride trap layer structure. Z-interference poses a significant challenge in 3D NAND flash memory, especially with the reduction in cell spacing to accommodate an increased number of vertically stacked 3D NAND flash memories. While the confined nitride trap layer device designed for complete isolation of the trapping layer in three dimensions effectively reduces Z-interference, the results showed substantial variations based on the confined structure. To clarify this issue, we compared three distinct confined nitride trap layer structures and investigated their impact on Z-interference. Our findings indicate that the rectangle structure exhibited the most significant mitigation, implying that differences in the electric field applied to the poly silicon channel, which is influenced by the structure, and the increase in effective channel length are effective strategies for alleviating Z-interference. The proposed structure undergoes a comprehensive examination through technology computer-aided design (TCAD) simulations. Additionally, we introduce a practical process flow designed to minimize Z-interference.

engineering, electrical & electronic,computer science, information systems,physics, applied

What problem does this paper attempt to address?

The paper attempts to address the issue of optimizing the constrained nitride trap layer structure in 3D NAND flash memory to improve Z-interference. Specifically, as the number of vertical stacking layers in 3D NAND flash memory increases, the spacing between word lines (WLs) decreases, leading to a more severe Z-interference problem. Z-interference refers to the phenomenon where programming an aggressor cell changes the threshold voltage (Vth) of adjacent victim cells, thereby affecting the Vth distribution window and reducing the margin between distributions.

To mitigate this issue, the paper proposes three different constrained nitride trap layer structures and evaluates their impact on Z-interference through Technology Computer-Aided Design (TCAD) simulations. The study finds that the rectangular structure performs best in alleviating Z-interference, primarily due to its significant optimization effect on the electric field distribution and effective channel length in the polysilicon channel. Additionally, the paper proposes a practical process flow to minimize Z-interference.