Abstract:In this paper, we propose an optimized device structure with a highly stable process that addresses threshold voltage shift issues in the String-Select-Line (SSL) and Ground-Select-Line (GSL) gates using ferroelectric memory in 3D NAND flash memory applications. The proposed device utilizes nickel (Ni) instead of tungsten (W) for the GSL and SSL gates, enabling optimized polarization properties during the annealing process and leveraging the disparity in thermal expansion coefficients. Notably, the difference in thermal expansion coefficient from tungsten (W), employed in other Word Line (WL) gates, allows effective control over polarization properties. To validate the proposed structure, we fabricated and measured a Metal–Ferroelectric–Insulator–Silicon (MFIS) capacitor utilizing Hafnium–Zirconium Oxide (HZO) material. The measurement results indicate that a change in the upper metal layer results in a more than fivefold increase in the variance of polarization characteristics between the WL gates (responsible for the memory function) and the SSL and GSL gates dedicated to channel control. In addition, process simulation was conducted using the same device structure, confirming the application of tensile stress to the HZO thin film in the case of a W electrode and compressive stress in the case of a Ni electrode. Furthermore, applying this controlled polarization characteristic parameter to the 3D NAND flash memory structure revealed a reduction in the threshold voltage shift of the control gate from a previous change of 2.6 V or more to 0.05 V, facilitating stable control.

Reduce cell to cell charge interference by virtual ground inclusion in 3-dimensional vertical gate NAND flash memory

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory

Simulation of Charge Trapping Memory with Novel Structures

A Novel Channel Preparation Scheme to Optimize Program Disturbance in Three-Dimensional NAND Flash Memory

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash

An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

Novel Multi-Bit Non-Uniform Channel Charge Trapping Memory Device with Virtual-Source Nand Flash Array

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

New Structure with SiO 2 -Gate-dielectric Select Gates in Vertical-Channel Three-Dimensional (3D) NAND Flash Memory

An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications

Improved Programming Efficiency Through Additional Boron Implantation at the Active Area Edge in 90 Nm Localized Charge-Trapping Non-volatile Memory

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash

A Novel Non-Planar Cell Structure for Flash Memory

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors

Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory