Abstract:Trap generation of a nonvolatile silicon-nanocrystal memory during Fowler–Nordheim programming/erasing (P/E) cycling is analyzed using the combination of capacitance–voltage and current–voltage measurements. With increasing the number of P/E cycles, the flatband voltage decreases due to hole trapping in the accumulation; the threshold voltage increases due to electron trapping in the inversion. The generation of hole and electron trapping is explained by an anode hole injection mechanism and a cathode injection mechanism, respectively. It is found that the magnitudes of hole and electron trapping depend on both Fowler–Nordheim programming and erasing bias conditions. Sweeping gate voltage from strong accumulation to strong inversion, a gate current spike appears near the silicon midgap voltage in cycled devices and is attributed to the recombination between trapped holes in the tunneling oxide and tunneling electrons from the acceptor interface states above the intrinsic Fermi level.

Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Charge Pumping Measurement for Determing Band-to-Band-Tunneling Induced Interface Damage During Erasing Operation of FLASH

Impact of Band-Engineering to Performance of High- K Multilayer Based Charge Trapping Memory

A Novel Dual-Bbhh Erasing Scheme To Improve Endurance And Retention Performances For Localized Charge Trapping Memories

A Novel Flash Memory Using Band-to-Band Tunneling In duced Hot Electron Injection to Program

Novel flash memory using band-to-band tunneling induced hot electron injection to program

Trapped Charge Distribution during the P/E Cycling of SONOS Memory

Simulation on endurance characteristic of charge trapping memory

Distribution and Impact of Local Trapped Charges in SONOS Memory

The Influence of Thermally Assisted Tunneling on the Performance of Charge Trapping Memory

Analysis of Trap Generation During Programming/erasing Cycling in Silicon Nanocrystal Memory Devices

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

Charge Tunneling and Trapping in Er Stabilized Β-Mno2 Films for Memory Applications

Discussion on the CHE Programming Characteristics with the Scaling Down of Charge Trapping Flash Memory

Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on Wse2

Hole Storage Characteristics in Ge/Si Hetero-Nanocrystal-Based Memories

Effects of CHE and CHISEL Programming Operation on the Characteristics of SONOS Memory

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*