Abstract:Thermochemical and electronic trapping/detrapping mechanism-based resistance switching in TiO2 is one of the most extensively researched topics in the field of resistance-switching random access memory (ReRAM). In this study, the subtle correlation between the formation and rupture of the Magnéli-based conducting filament (CF), which is the mechanism of non-polar thermochemical-reaction-based switching, and the electron trapping/detrapping at the defect centers, which is the mechanism of bipolar electronic switching, is examined in detail. The chemical interaction between the TiN top electrode and the TiO2 layer generates a stable and immobile electron trapping layer, which is called a "switching layer", whereas the thin region between the just-mentioned switching layer and the remaining Magnéli CF after the thermochemical reset comprises a non-switching layer. The seemingly very complicated switching behavior with respect to the bias polarity, compliance current, and detailed biasing sequence could be reasonably explained by the phenomenological model based on the combined motions of the CF, switching layer, and non-switching layer. Light-induced detrapping experiments further supplement the suggested switching model.

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*

Local Accumulated Free Carriers in Charge Trapping Memory

The Influence of Thermally Assisted Tunneling on the Performance of Charge Trapping Memory

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

Simulation on endurance characteristic of charge trapping memory

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Effect of Trapped Charge Accumulation on the Retention of Charge Trapping Memory

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

Simulation of Retention Behavior for the Phase Change Memory

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Simulation of Charge Trapping Memory with Novel Structures

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories

A novel internal field enhanced retention degradation model for localized charge trapping memory device

A Physical Based 2D Monte Carlo Simulation of MO-ECRAM Programming for Device Optimization

Characterization of Charge-Trap-Transistor (CTT) Threshold Voltage Degradation and DifferentialPair-Based Memory Design

Interface Engineering to Enhance Phase Change Memory Programmability

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Self-consistent Simulation of PRAM with Comprehensive Physical Models