Abstract:The charge-trapping memory devices with a structure Pt/Al 2 O 3 /(Ta 2 O 5 ) x (TiO 2 ) 1 − x /Al 2 O 3 /p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta 2 O 5 ) x (TiO 2 ) 1 − x and Si substrate was designed to enhance the memory performance by controlling the composition and dielectric constant of the charge-trapping layer and reducing the difference of the potentials at the bottom of the conduction band between (Ta 2 O 5 ) x (TiO 2 ) 1 − x and Si substrate. The memory device with a composite charge storage layer (Ta 2 O 5 ) 0.5 (TiO 2 ) 0.5 shows a density of trapped charges 3.84 × 10 13 /cm 2 at ± 12 V, a programming/erasing speed of 1 µs at ± 10 V, a 8% degradation of the memory window at ± 10 V after 10 4 programming/erasing cycles and a 32% losing of trapped charges after ten years. The difference among the activation energies of the trapped electrons in (Ta 2 O 5 ) x (TiO 2 ) 1 − x CTM devices indicates that the retention characteristics are dominated by the difference of energy level for the trap sites in each TTO CTM device.

Local Accumulated Free Carriers in Charge Trapping Memory

Effect of Trapped Charge Accumulation on the Retention of Charge Trapping Memory

The Influence of Thermally Assisted Tunneling on the Performance of Charge Trapping Memory

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*

Simulation of Charge Trapping Memory with Novel Structures

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Carriers recombination processes in charge trapping memory cell by simulation

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

Simulation on endurance characteristic of charge trapping memory

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

Study Of Intercell Trapped Charge For Data Retention Improvement In 3d Nand Flash Memory

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

In Situ Electron Holography Study of Charge Distribution in High-Κ Charge-Trapping Memory

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Band-Alignment Dominated Retention Behaviors In High-K Composite Charge-Trapping Memory Devices

Performance Enhancement Of Multilevel Cell Nonvolatile Memory By Using A Bandgap Engineered High-Kappa Trapping Layer