Abstract:The floating gate type of flash memory is impossible to scale down to beyond 45 nm due to the difficulty in scaling the tunnel oxide and the gate coupling ratio. Because of the difficulty in maintaining high gate coupling ratio and preventing cross talk between neighboring cells, NAND technology is forecasted to migrate gradually from floating gate devices (FG) to charge trapping memory (CTM). CTM are not sensitive to tunnel oxide damage since the charge is stored in discrete traps and one weak spot does not cause all stored charge to leak out as in floating gate devices. The NAND HC-TANOS flash cell has been generated in three dimensional TCAD tools with 38 nm gate length, 34 nm channel width and charge trapping structures. A structure of Al2O3 (15 nm)/Si3Na (6.5 nm)/SiO2 (4.5 nm) with TaN gate was employed as the gate stack. To study the effects of gate stack coverage on flash cell's performance, the shape of gate stack is varied while keeping all other structural parameters fixed.

Carriers recombination processes in charge trapping memory cell by simulation

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

Local Accumulated Free Carriers in Charge Trapping Memory

Effect of Trapped Charge Accumulation on the Retention of Charge Trapping Memory

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

Simulation on endurance characteristic of charge trapping memory

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

Progress of Charge Trapping Layers in Charge Trapping Memories

Simulation of Charge Trapping Memory with Novel Structures

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

In Situ Electron Holography Study of Charge Distribution in High-Κ Charge-Trapping Memory

Impact of Quantum Confinement and Coulomb Blockade on the retention of nanocrystals based charge trapping memory

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices

Monte-Carlo Based Simulation Method for Ferroelectric Memory Devices Including Polarization Switching and Trap Behaviors

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

A compact model for phase change memory based on carrier transport mechanism

Effects of interface traps in silicon-quantum-dots-based memory structures