Abstract:Charge trapping devices incorporating 2D materials and high-κ dielectrics have emerged as promising candidates for compact, multifunctional memory devices compatible with silicon-based manufacturing processes. However, traditional charge trapping devices encounter bottlenecks including complex device structure and low operation speed. Here, we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al 2 O 3 trapping layer with a MoS 2 channel, where charge traps reside within the Al 2 O 3 bulk confirmed by transfer curves with different gate-voltage sweeping rates and photoluminescence (PL) spectra. The direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed (≈300 ns), an extremely low OFF current of 10 -14 A, a high ON/OFF current ratio of up to 107, and stable retention and endurance properties. Furthermore, the device with a simple symmetrical structure exhibits VD polarity-dependent reverse rectification behavior in the high resistance state (HRS), with a rectification ratio of 10 5 . Additionally, utilizing the synergistic modulation of the conductance of the MoS 2 channel by V D and V G , it achieves gate-tunable reverse rectifier and ternary logic capabilities.

Progress of Charge Trapping Layers in Charge Trapping Memories

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory

In Situ Electron Holography Study of Charge Distribution in High-Κ Charge-Trapping Memory

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

Simulation of Charge Trapping Memory with Novel Structures

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High- K Dielectric Multilayer Structure

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS 2

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology

Impact of the Interfaces in the Charge Trap Layer on the Storage Characteristics of ZrO2/Al2O3 Nanolaminate-Based Charge Trap Flash Memory Cells

Dependence Of Electrons Loss Behavior On The Nitride Thickness And Temperature For Charge Trap Flash Memory Applications

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Comparison Of Reliability Of Single And Stacked High-K Structures Of Charge Trapping Memories

The Effect of the Thickness of Tunneling Layer on the Memory Properties of (cu2o)(0.5)(al2o3)(0.5) High-K Composite Charge-Trapping Memory Devices

Charge Storage Characteristics of Atomic Layer Deposited Zro2/Al2o3 Multilayered Films

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices