Abstract:Thermochemical and electronic trapping/detrapping mechanism-based resistance switching in TiO2 is one of the most extensively researched topics in the field of resistance-switching random access memory (ReRAM). In this study, the subtle correlation between the formation and rupture of the Magnéli-based conducting filament (CF), which is the mechanism of non-polar thermochemical-reaction-based switching, and the electron trapping/detrapping at the defect centers, which is the mechanism of bipolar electronic switching, is examined in detail. The chemical interaction between the TiN top electrode and the TiO2 layer generates a stable and immobile electron trapping layer, which is called a "switching layer", whereas the thin region between the just-mentioned switching layer and the remaining Magnéli CF after the thermochemical reset comprises a non-switching layer. The seemingly very complicated switching behavior with respect to the bias polarity, compliance current, and detailed biasing sequence could be reasonably explained by the phenomenological model based on the combined motions of the CF, switching layer, and non-switching layer. Light-induced detrapping experiments further supplement the suggested switching model.

Effect of Trapped Charge Accumulation on the Retention of Charge Trapping Memory

Local Accumulated Free Carriers in Charge Trapping Memory

The Influence of Thermally Assisted Tunneling on the Performance of Charge Trapping Memory

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Simulation on endurance characteristic of charge trapping memory

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

Carriers recombination processes in charge trapping memory cell by simulation

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Simulation of Charge Trapping Memory with Novel Structures

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*

Trapped Charge Distribution during the P/E Cycling of SONOS Memory

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

A novel internal field enhanced retention degradation model for localized charge trapping memory device

Analysis of Trap Generation During Programming/erasing Cycling in Silicon Nanocrystal Memory Devices

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

TrappedCharge Distribution During Thep/ecycling Ofsonosmemory

Remarkable Charge-Trapping Efficiency of the Memory Device with (tio2)(0.8)(al2o3)(0.1) Composite Charge-Storage Dielectric