Abstract:Insulator materials can trap charges, referring to electrets, which are attractive for transistors and memories. However, insulators intrinsically exhibit high electrical resistance, thus the charge injection and release inside insulators typically need high voltage or long bias time, limiting the applications that require high writing/erasing speed. In this work, insulator polymer polystyrene (PS) film is treated by a soft plasma, which selectively induces a high density of charge traps at the top surface, without changing the electronic properties of the underneath materials. The thus-prepared surface is easily occupied by external neat charges to form a meso-stable electret. Subsequently, the electret is used as an ultra-thin charge trapping layer to build transistors for some applications. Consequently, in transistor architecture, the charge injection and release at soft plasma treated PS surface can be more easily achieved in a short stimulus as compared with pristine PS counterpart, and the density of captured holes under gate bias reaches 2.9 x 10(12) cm(-2) in 1 ms. Under UV irradiation, charge transfer occurs from the photo-excited semiconductor to the electret, contributing to the rapid release of the stored holes. This soft plasma-generated electret is then utilized for flash-type memories, photodetectors, and artificial synapses.

TrappedCharge Distribution During Thep/ecycling Ofsonosmemory

Trapped Charge Distribution during the P/E Cycling of SONOS Memory

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory Devices

Optimization of Polysilicon Gate Etching Process in SONOS Memory Fabrication

Distribution and Impact of Local Trapped Charges in SONOS Memory

Effect of Trapped Charge Accumulation on the Retention of Charge Trapping Memory

Simulation on endurance characteristic of charge trapping memory

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

Comprehensive Understanding of Charge Lateral Migration in 3d Sonos Memories

Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

Rapid Charge Storage and Release at Etching‐Assist Electret in Organic Transistors for Memories, Photodetectors, and Artificial Synapses

The Promising Multi-Bit/level Programming Operations for Nano-Scaled SONOS Memory

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

A Novel Modified Charge Pumping Method for Trapped Charge Characterization in Nanometer-Scale Devices

Study Of Intercell Trapped Charge For Data Retention Improvement In 3d Nand Flash Memory

Analysis of Trap Generation During Programming/erasing Cycling in Silicon Nanocrystal Memory Devices

Remarkable Charge-Trapping Efficiency of the Memory Device with (tio2)(0.8)(al2o3)(0.1) Composite Charge-Storage Dielectric

Comparison of Local Programming Method for Multi-Bit/Level 90nm Sonos Memory

Charge Pumping Measurement for Determing Band-to-Band-Tunneling Induced Interface Damage During Erasing Operation of FLASH