Abstract:High-speed low-power mobile devices are sensitive to electrostatic discharge (ESD)-induced soft errors, such as unwanted reset, lock up, loss of user interface, disturbed displays, etc. ESD can couple via current and fields into the internal cabling, printed circuit board traces but also directly into the integrated circuits (ICs). Many portable devices shield nearly all traces using top and bottom layer ground planes, and they apply effective filters at cable entry points such that direct field coupling to the IC can dominate the system's ESD sensitivity. However, a little information is available on the robustness of ICs against direct ESD transient field coupling. A methodology for determining this robustness was developed and applied to a set of consumer electronic ICs to create an initial robustness database. Custom-made electric and magnetic field probes are driven by a 400-ps rise time transmission line pulser to evaluate 37 different ICs. The investigation showed that 50% of the ICs were disturbed at approximately 33 kV/m for the electric field injection and 142 A/m for the magnetic field injection at this rise time. This methodology can serve as the basis for further investigations of ICs. The database can be used to estimate the likelihood of field-coupled ESD-induced soft errors in electronic products.

Charge Pumping Measurement for Determing Band-to-Band-Tunneling Induced Interface Damage During Erasing Operation of FLASH

A New Charge-Pumping Measurement Technique for Lateral Profiling of Interface States and Oxide Charges in MOSFETs

Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States

A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices with Poly-Si Channel

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

Direct Charge Measurement in Floating Gate Transistors of Flash EEPROM Using Scanning Electron Microscopy

Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Development of a Fast Technique for Characterizing Interface States

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Trapped Charge Distribution during the P/E Cycling of SONOS Memory

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Simulation on endurance characteristic of charge trapping memory

Development of new characterisation technique for interface states beyond bandgap

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-Kappa Intergate Dielectrics of Flash Memory Cells

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

A Novel Modified Charge Pumping Method for Trapped Charge Characterization in Nanometer-Scale Devices

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

A new technique for probing the energy distribution of positive charges in gate dielectric

Measurement Methodology for Field-Coupled Soft Errors Induced by Electrostatic Discharge