Abstract:The SiC/SiO 2 interface state is one of the main factors that limit the performance and reliability of the SiC metal–oxide–semiconductor field-effect transistor (MOSFET). In this article, we use a Bayesian deconvolution algorithm to optimize trap feature extraction based on the transient current method and improve the trap extraction accuracy. Using this method, we study the trap capture mechanism in SiC MOSFETs and mainly characterize the trap position, the trap energy level, and the capture time constant. The results obtained show that there are three different types of traps and defects, two of which are SiC interface traps at the gate–source and gate–drain interfaces, with activation energies of 0.089 and 0.035 eV, respectively, and the third trap type is an oxide trap, and its time constant does not vary with temperature. The characterization results are verified via deep-level transient spectroscopy, and the results show reasonable agreement with those obtained by the method proposed in this article. This method can be combined with electrical stress testing in long-term reliability research to realize nondestructive characterization of the defects of SiC MOSFETs.

A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

An Improved Method to Extract Generation of Interface Trap in Hot-Carrier-Stressed LDD n-MOSFET

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

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Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

An Accurate Method To Extract And Separate Interface And Gate Oxide Traps By The Mosfet Subthreshold Current

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

A test structure and spectroscopic method for monitoring interface traps

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Method For Direct Characterizing Interface Traps In Sti-Type High Voltage Soi Ldmosfets

Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

Extraction Method of Interfacial Injected Charges for SiC Power MOSFETs

Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors

Linear Cofactor Difference Method of MOSFET Subthreshold Characteristics for Extracting Interface Traps Induced by Gate Oxide Stress Test

Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Investigation of Extra Traps Measured by Charge Pumping Technique in High Voltage Zone in P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Hfo2/Metal Gate Stacks

A Multi-Region Trap Characterization Method and Its Reliability Application on STI-based High-Voltage LDMOSFETs