Abstract:With the growing use of SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet in power electronic equipment, it is meaningful to extract precise typical waveforms and characteristics for device manufacture, converter design, and operating evaluation. Many solutions have been proposed to improve measurement precision by equipment and essential techniques. However, the measured object should also be accurately identified as the existing measurement result consisting of the expected gate-source voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v GS ) and voltage drops on parasitic parameters between measuring points. This article, first, reveals the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v GS measurement deviation of TO-247-4 and TO-247-3 devices during the switching process and crosstalk, based on the equivalent circuit model and simulation waveforms. According to the clarification of the measured object, an improved <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v GS extraction method is proposed to eliminate this deviation. Voltage drops on parasitic parameters are compensated, with the help of high-precision equipment and the proven parasitic parameter extraction technique. Experiments are constructed to verify the analysis of measurement deviation and the availability of the proposed method. Comparison between various operating conditions emphasizes its necessity, especially in high-capacity and low-driving-resistor applications, contributing to characterization, operating condition monitoring, protection design, and measurement understanding of wide band-gap devices.

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Accurate SiC MOSFET Chip Extraction Based on Parasitic Parameter Impact Compensation<italic/><sub/>

Impact of SiC power MOSFET interface trap charges on UIS reliability under single pulse

Accurate SiC MOSFET Chip V<sub>gs</sub> Extraction Based on Parasitic Parameter Impact Compensation

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A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs

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Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

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Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power MOSFETs under Repetitive Short Circuit Stress

Investigation of Inrush Current Induced Trench Gate Degradation inside SiC MOSFET by New Fowler- Nordheim Localization Methodology

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Characteristics of Thermally Nitrided Gate Oxide Grown on N- and P-type 4H-SiC Surface from Commercial SiC MOSFET Perspective