Abstract:The conventional and the fast pulsed IV measurements are carried out for the extraction of the threshold voltage shift for p-MOSFETs under stress. In addition, the on-the-fly interface trap (OFIT) measurement technique recently developed by our group is applied to the characterization of interface trap generation and recovery. The OFIT data are compared with those obtained using conventional charge pumping and direct-current current-voltage measurements. It is shown that the time delay during various measurements affects the measured characteristics of NBTI, which may mislead the understanding of NBTI mechanism. It is found that the interface trap generation plays a more important role in NBTI than that of oxide charges in the long time, especially for 10 years lifetime prediction. The results on the interface trap generation suggest a dispersive transport process, which indicates that the classical reaction-diffusion model should be reconsidered carefully.

A Novel Modified Charge Pumping Method for Trapped Charge Characterization in Nanometer-Scale Devices

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Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

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Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors

An Accurate Method To Extract And Separate Interface And Gate Oxide Traps By The Mosfet Subthreshold Current

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A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress

TrappedCharge Distribution During Thep/ecycling Ofsonosmemory

Distribution and Impact of Local Trapped Charges in SONOS Memory