Abstract:Devices based on charge trapping are a promising solution for Flash memory scaling. The nonconductivity of their storage medium makes them more robust with respect to data loss by charge leakage through the bottom oxide, which, on the contrary sets a hard limit to floating-gate Flash scalability. Their simple processing, highly compatible with CMOS, makes them rapidly integrable into short-term solutions. The well-known SONOS concept however, still suffers from insufficient data throughput and retention. On the other hand, the recently proposed NROM concept, storing two bits in a cell, offers very interesting characteristics by using hot carrier based program/erase operations. However, important drawbacks remain, like insufficient isolation of the bits for scalability, high-power programming, and degradation of the retention after cycling. In this paper, we present a dual-bit trapping device which solves most of these problems by using a split-gate structure which was inspired by the HIMOS concept. The device has a fully self-aligned structure which allows for both bits to be physically isolated in the cell. Those features make it very scalable. Programming can be performed by the very efficient source-side injection mechanism, while erase is done by injection of band-to-band tunneling induced hot holes, which compensate for the trapped electrons. This leads to performances comparable to NROM but with lower power consumption, and lower operating voltages.

Direct Charge Measurement in Floating Gate Transistors of Flash EEPROM Using Scanning Electron Microscopy

A novel flash EEPROM cell based on trench technology for integration within power integrated circuits

Charge Pumping Measurement for Determing Band-to-Band-Tunneling Induced Interface Damage During Erasing Operation of FLASH

Simulation Of A New Eeprom Flash Memory Cell For High Density Applications

A New Charge-Pumping Measurement Technique for Lateral Profiling of Interface States and Oxide Charges in MOSFETs

Rapidly Measuring Charge Carrier Mobility of Organic Semiconductor Films Upon a Point-Contact Four-Probes Method

A proper approach to characterize retention-after-cycling in 3D-Flash devices

A New Ultra-Fast Single Pulse Technique (UFSP) for Channel Effective Mobility Evaluation in MOSFETs

A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation.

A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States

A New Embedded Measurement Structure for eDRAM Capacitor

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-Kappa Intergate Dielectrics of Flash Memory Cells

Quantitative Measurement of the Charge Carrier Concentration Using Dielectric Force Microscopy

EOF Measurement by Detection of a Sampling Zone with End‐channel Amperometry in Microchip CE

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory with A Sensing Current Protection Technique

Identification of Cell Status via Simultaneous Multitarget Imaging Using Programmable Scanning Electrochemical Microscopy

Analyzing Trap Generation in Silicon-Nanocrystal Memory Devices Using Capacitance and Current Measurement

Charge-Selective 2D Heterointerface-Driven Multifunctional Floating Gate Memory for In Situ Sensing-Memory-Computing

Simulation of Charge Trapping Memory with Novel Structures