A novel flash EEPROM cell based on trench technology for integration within power integrated circuits

D. M. Garner,Chen, Y.,Sabesan, L.,G. A. J. Amaratunga,A. Blackburn,J. Clark,S. S. Sekiariapuram,A. g. r. Eva
DOI: https://doi.org/10.1109/55.841307
2000-01-01
Abstract:A flash EEPROM suitable for integration within power integrated circuits (PIC's) is presented. The EEPROM cell uses a trench floating gate to give a large gate charge while using no more silicon area than a conventional flash EEPROM cell. The cell shows good immunity against the induced disturbance voltages which are present in a PIC, and the storage lifetime is greater than ten years at a reading voltage of V/sub D/=2.2 V.
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