Abstract:Schematic of the WS2/h‐BN/WS2 sandwich FGFET device structure with highly n‐doped Si wafer with 300 nm SiO2 is used as the substrate and energy band diagram of the FGFET at the program state. The FGFET can achieve two mode programming state by changing the type of metal‐semiconductor contact when the floating gate applies positive and negative voltage. Research on van der Waals heterostructures based on stacked two‐dimensional atomic thickness crystals has received considerable attention because of their unique characters and great potential applications in flexible transparent electronics and optoelectronics. In this study, a nonvolatile memory device with a few‐layer bipolar material WS2 as channel and charge‐trapping layers is designed with a floating‐gate structure in which charges (electrons and holes) can be stored in the charge‐trapping layer using a dual‐mode processing program by changing the metal–semiconductor contact type. The device exhibits different programming currents during programming, in particular, the device has a low programming current for programming voltages ˂20 V. Moreover, the heterostructure exhibits a remarkable long retention time (≈10,000 s), with no apparent degradation and a strong endurance, retaining its original performance even after 1,000 programming/erasing cycles. This study proposes a novel method for reducing power consumption while programming to facilitate artificial synapse applications.

Novel flash memory using band-to-band tunneling induced hot electron injection to program

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

A Novel Flash Memory Using Band-to-Band Tunneling In duced Hot Electron Injection to Program

Novel self-convergent programming method using source-induced band-to-band hot electron injection

A Novel High Programming Efficiency and Highly Scalable Flash Memory Cell Based on Tunneling Fet (Tfet)

Novel p-Channel Selected n-Channel Divided Bit-Line NOR Flash Memory Using Source Induced Band-to-Band Hot Electron Injection Programming

A novel flash memory cell and design optimization for high density and low power application

A Novel 2 T P-Channel Nano- Crystal Memory for Low Power/High Speed Embedded Nvm Applications

High-gate-injection Tunneling Field Effect Transistor for Flash Memory Applications

A Novel Non-Planar Cell Structure for Flash Memory

A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

The Optimization of Program Operation for Low Power Consumption in 3D Ferroelectric (Fe)-NAND Flash Memory

Multilayer Layer Graphene Nanoribbon Flash Memory: Analysis of Programming and Erasing Operation

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

A 3-Bit Multilevel Cell Programming Method in Nitride Memory Devices

Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling

Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts

Interface Engineering to Enhance Phase Change Memory Programmability

Ultrafast non-volatile flash memory based on van der Waals heterostructures