Abstract:The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

Multilayer Layer Graphene Nanoribbon Flash Memory: Analysis of Programming and Erasing Operation

Multilayer Graphene Nanoribbon and Carbon Nanotube Based Floating Gate Transistor for Nonvolatile Flash Memory

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Graphene Nanotechnology for the Next Generation Nonvolatile Memory

A Novel Flash Memory Using Band-to-Band Tunneling In duced Hot Electron Injection to Program

Graphene flash memory.

Novel flash memory using band-to-band tunneling induced hot electron injection to program

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts

A Novel High Programming Efficiency and Highly Scalable Flash Memory Cell Based on Tunneling Fet (Tfet)

Demonstration of Nonvolatile Multilevel Memory in Ambipolar Carbon Nanotube Thin-Film Transistors

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Memtransistor-like operation of devices made by graphene/h-BN/MoS2 van der Waals heterostructure

Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling

Ultrafast non-volatile flash memory based on van der Waals heterostructures

Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Metal Floating Gate Memory Device with SiO 2 /hfo 2 Dual-Layer As Engineered Tunneling Barrier

A novel flash memory cell and design optimization for high density and low power application