Abstract:Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving penta-layer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable Ferro-valleytricity of penta-layer rhombohedral graphene to develop non-volatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less non-volatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, non-destructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ~ 6 nW required per write operation and ~ 2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed non-volatile memory array without modifying the peripheral circuitry. Our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

Graphene Nanotechnology for the Next Generation Nonvolatile Memory

Multilayer Graphene Nanoribbon and Carbon Nanotube based Floating Gate Transistor for Nonvolatile Flash Memory

Graphene based non-volatile memory devices.

Carbon nanomaterials for non-volatile memories

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Graphene flash memory.

Multilayer Layer Graphene Nanoribbon Flash Memory: Analysis of Programming and Erasing Operation

Graphene Based Field Effect Transistors for Novel Nonvolatile Memories

Carbon Nanotube Based Non-Volatile Memory and Charge Sensors

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Graphene Nonvolatile Memory Prototype Based on Charge-Transfer Mechanism

Gate-controlled Non-Volatile Graphene-Ferroelectric Memory

Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute

Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials

Non-Volatile Organic Memory Elements Based on Carbon-Nanotube-Enabled Vertical Field-Effect Transistors

Tunable and Nonvolatile Multibit Data Storage Memory Based on MoTe2/boron Nitride/graphene Heterostructures Through Contact Engineering

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Graphene Oxide Nanosheets Based Organic Field Effect Transistor for Nonvolatile Memory Applications

Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide

Solution-Processed, Flexible, and Transparent Non-Volatile Memory with Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers