Abstract:Plasma etching with high selectivity and anisotropy for 20 nm poly-Si gate patterning on EOT of 1.4 nm gate oxynitride is developed in a Cl2/HBr/O2 gas mixture successfully. Direct write e-beam lithography is used for an SAL601 chemically amplified negative resist pattern. Using a combination of resist ashing and TEOS hard mask trimming process, sub-25 nm TEOS SiO2 mask patterns are obtained in the control. Various gas mixtures based on Cl2, HBr, and O2 have been used to study the etching characteristics of poly-Si on EOT of 1.4 nm gate oxynitride. The O2 content as well as HBr are very sensitive to etch rate, selectivity, and the protection of the sidewalls of polysilicon, owing to SiO2-like film, SiOxBry, formed on the etched surface confirmed by x-ray photoelectron spectroscopy. And the ratio of Cl2/HBr/O2 in gas mixture is also tightly related to the etching profile. Using a four-step etching process under optimum conditions the selectivity of poly-Si to oxide is much higher than 500:1, in fact, after polysilicon etching the net deposition of oxide is observed, and no damage on the active area beside the gates for EOT of 1.4 nm gate oxide is observed, too. The etching profile of the 20 nm poly-Si gate pattern is perfectly vertical and an overall narrowing by an estimated 5 nm is observed for oxide masked poly-Si gate etching. The possible mechanism is discussed. This etching process combined with resist ashing and the TEOS hard mask trimming process are implemented successfully to the fabrication of high performance 36 nm gate length complementary metal–oxide–semiconductor (CMOS) devices and 42 nm gate length 32 frequency dividers with 57 stage/201 stage CMOS ring oscillators embedded, the EOT of gate oxynitrid is 1.4 nm, and very good results are obtained.

Optimization of Polysilicon Gate Etching Process in SONOS Memory Fabrication

Research on Integrated Trench Etching for Trench-Type Power MOSFET

20 Nm Polysilicon Gate Patterning and Application in 36 Nm Complementary Metal–oxide–semiconductor Devices

Goi Improvement in 65nm Sacrificial Oxide Free Process Integration

Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process

HV Gate Oxide Over-Oxidation Process Optimization for SONOS 1.5T Flash Cell

Process Characterization and Control of Polycrystalline SiGe As the Gate Electrode in CMOS Fabrication

Unveiling Polycrystalline Silicon Channel Dissolution Mechanism in Wet Etching Process of 3d Nand Fabrication

Improvement of Cell’s Performance for Low Power Self-Aligned Split-Gate SONOS Memory Device

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

Reducing the Influence of Sti on Sonos Memory Through Optimizing Added Boron Implantation Technology

Investigation and Process Optimization of Sonos Cell'S Drain Disturb in 2-Transistor Structure Flash Arrays

Effect Of Control Oxide On The Performance Of Nanocrystalline Silicon Based Double-Barrier Floating Gate Memory Structure

Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide–Nitride–Oxide Stack Gate Dielectric

Investigation of Impact of Shallow Trench Isolation on SONOS Type Memory Cells

Study of the Nanometer Scale Polysilicon Micro Structure Etching

Fabrication and Characterization of A Novel Fully Self-Aligned Split-Gate Sonos Memory Device

Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching

Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory

Optimization of Bump Defect at High-Concentration In-Situ Phosphorus Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application

Floating Gate Etch Profile Control for Nand Flash Memory