Abstract:Charge storage characteristics have been investigated in metal-oxide-semiconductor memory structures based on silicon nanocrystals, where various interface traps and defects were introduced by thermal annealing treatment. The observations demonstrate that traps have strong influence on the charge storage behavior, in which the traps and defects at the internal/surface of silicon nanocrystals and the interface states at the SiO2/Si substrate play different roles, respectively. It is suggested that the injected charges are mainly stored at the deep traps of nanocrystals instead of the conduction band in long-term retention mode. The long-term charge-loss process is dominantly determined by the direct tunneling of the trapped charges to the interface states in the present experiment. An optimum way to improve the retention time would be to introduce a certain number of deep trapping centers in nanocrystals and to decrease the interface states at SiO2/Si substrate. (C) 1998 American Institute of Physics. [S0021-8979(98)09216-0].

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

Effects of interface traps in silicon-quantum-dots-based memory structures

Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes

Silicon Nano-Crystals Based Mos Memory and Effects of Traps on Charge Storage Characteristics

Enhanced Memory Performance by Tailoring the Microstructural Evolution of (zro 2 ) 0.6 (sio 2 ) 0.4 Charge Trapping Layer in the Nanocrystallites-Based Charge Trap Flash Memory Cells

Impact of the Interfaces in the Charge Trap Layer on the Storage Characteristics of ZrO2/Al2O3 Nanolaminate-Based Charge Trap Flash Memory Cells

Impact of Quantum Confinement and Coulomb Blockade on the retention of nanocrystals based charge trapping memory

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Charge Storage Characteristics in Al/AlN/Si Metal–insulator–semiconductor Structure Based on Deep Traps in AlN Layer

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

The Charge Storage Characteristics of Zro2 Nanocrystallite-Based Charge Trap Nonvolatile Memory

Effect of Energy-Band Bending Induced by Precipitation of ZrO2nanocrystals on Memory Characteristics of Charge-Trap Flash Memory

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

Effect of Annealing Atmosphere on the La2O3Nanocrystallite Based Charge Trap Memory

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

Simulation of Charge Trapping Memory with Novel Structures