Abstract:One critical problem inhibiting the application of MoS2 field-effect transistors (FETs) is the hysteresis in their transfer characteristics, which is typically associated with charge trapping (CT) and charge detrapping (CDT) induced by atomic defects at the MoS2-dielectric interface. Here, we propose a novel atomistic framework to simulate electronic processes across the MoS2-SiO2 interface, demonstrating the distinct CT/CDT behavior of different types of atomic defects and further revealing the defect type(s) that most likely cause hysteresis. An anharmonic approximation of the classical Marcus theory is developed and combined with state-of-the-art density functional theory to calculate the gate bias-dependent CT/CDT rates. All the key electronic quantities are calculated with Heyd-Scuseria-Ernzerhof hybrid functionals. The results show that single Si-dangling bond defects are active electron trapping centers. Single O-dangling bond defects are active hole trapping centers, which are more likely to be responsible for the hysteresis phenomenon due to their significant CT rate and apparent threshold voltage shift. In contrast, double Si-dangling bond defects are not active trap centers. These findings provide fundamental physical insights for understanding the hysteresis behavior of MoS2 FETs and provide vital support for understanding and solving the reliability of nanoscale devices.

Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes

Effects of interface traps in silicon-quantum-dots-based memory structures

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

Silicon Nano-Crystals Based Mos Memory and Effects of Traps on Charge Storage Characteristics

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Electrical Characteristics of Near-Interface Traps in 3C-Sic Metal–Oxide–Semiconductor Capacitors

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

Charge Storage Characteristics in Al/AlN/Si Metal–insulator–semiconductor Structure Based on Deep Traps in AlN Layer

Space Charge and Trap Energy Level Characteristics of SiC Wide Bandgap Semiconductor

Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

The Effect of Interface Traps at the Si/SiO2 Interface on the Transient Negative Capacitance of Ferroelectric FETs

Electrical characterization of SiC MOS capacitors: A critical review

Effect of traps on carrier transport in CdSe quantum dot thin films

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric