Abstract:The electrical properties of ferroelectric (Fe) FETs with Negative Capacitance (NC) have been explored theoretically at temperatures ranging from -280 to +360 degrees Celsius. Temperature influences ferroelectric thin film surface potential amplification with a fixed thickness, according to the findings. As the temperature of the ferroelectric NC effect rises, the device's transfer and output qualities deteriorate. The findings of this work could be used in the future to help improve FeFET design and performance for applications that require low power dissipation. The NC effect in symmetric long channel double-gate Junctionless transistors with two gates is predicted using an analytical model based on the charge principle. We explored the effect of ferroelectric thickness on I-V characteristics to better understand ferroelectric materials. In our model, positive capacitance lowers short channel effects while enhancing current overdrive, resulting in lower power consumption and more efficient transistor size scaling. Based on our calculations for a long channel Junctionless with NC, the device's ON current will be six times higher than that of a Junctionless FET. We use oxygen ion mobility to explain sub-60 mV/dec results in thin-film Ta2O5/ZnO transistors with dynamic gate bias sweep. The oxygen ions in Ta2O5 direct the model in dynamic gate bias sweep, resulting in NC. When achieving a sub 60 mV/decade subthreshold slope, the study finishes by revealing design tradeoffs that give an engineer or physicist insight into the current status of ferroelectric nanowires and ferroelectric FETs' uses and limitations.

The Effect of Interface Traps at the Si/SiO2 Interface on the Transient Negative Capacitance of Ferroelectric FETs

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure

Impact of Interface Trap Density on the Endurance of HFO<inf>2</inf>/SI FEFETS

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr 1- x O 2 /Interlayer/Si (MFIS) Gate Structure

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Impacts of Metal Interlayer on Negative Capacitance Transistors

Physical Insights into the Impact of Internal Metal Gate on the Subthreshold Behavior of NCFET Based on Domain Switching Dynamics

Theoretical Study of Negative Capacitance FinFET With Quasi-Antiferroelectric Material

A Comparative Study on the Impacts of Interface Traps on Tunneling Fet and Mosfet

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field-Effect Transistors

Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges