Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

Impacts of Metal Interlayer on Negative Capacitance Transistors

Channel Doping Effects in Negative Capacitance Field-Effect Transistors

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Ferroelectric Negative Capacitance Field Effect Transistor

Physical Insights into the Impact of Internal Metal Gate on the Subthreshold Behavior of NCFET Based on Domain Switching Dynamics

Mismatch of Ferroelectric Film on Negative Capacitance FETs Performance

Ferroelectric behavior and NCFETs - TCAD Simulation

Exploration of Negative Capacitance in Multi-Gate Junctionless Transistor

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

The Effect of Interface Traps at the Si/SiO2 Interface on the Transient Negative Capacitance of Ferroelectric FETs

Physical Investigation of Subthreshold Swing Degradation Behavior in Negative Capacitance FET

Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field-Effect Transistors

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

Analytical Drain Current Model for Long-Channel Gate-All-around Negative Capacitance Transistors with a Metal–ferroelectric–insulator–semiconductor Structure

New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETs

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET