Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

Delay and Power Evaluation of Negative Capacitance Ferroelectric Mosfet Based on Spice Model

Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Ferroelectric Negative Capacitance Field Effect Transistor

Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors

Experimental Study on the Transient Response of Negative Capacitance Tunnel FET

Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETs

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level

Investigation of Negative Capacitance Gate-all-Around Tunnel FETs Combining Numerical Simulation and Analytical Modeling

Polarization Gradient Effect of Negative Capacitance LTFET

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Physical Investigation of Subthreshold Swing Degradation Behavior in Negative Capacitance FET