Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors

Jiuren Zhou,Genquan Han,Nuo Xu,Jing Li,Yue Peng,Yan Liu,Jincheng Zhang,Qing-Qing Sun,David Wei Zhang,Yue Hao
DOI: https://doi.org/10.1109/ted.2019.2931402
IF: 3.1
2019-01-01
IEEE Transactions on Electron Devices
Abstract:For the first time, this study experimentally validates that the depolarization field (EDE) in the ferro-electric (FE) film leads to voltage gains in negative capacitance (NC) field-effect transistors (FETs). For both NCFETs with and without a floating gate, the steeper subthreshold swing (SS) and the enhanced ION are achieved under dc and pulse measurements corresponding to the measured voltage gains (dV(int)/dV(GS) > 1). Furthermore, the voltage gains are theoretically calculated based on the depolarization theory and the voltage distribution across the gatestack, showing good agreementswith themeasured results. In conclusion, EDE in an FE film produces the NC effect and the voltage gains. Even with P < 1.5 mu C/cm(2), sufficient EDE is still produced in NCFETs to achieve improved electrical performance over the reference MOSFET. These findings suggest a way for low-voltage and high-reliability NCFETs.
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