Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

Origin of Steep Subthreshold Swing Within the Low Drain Current Range in Negative Capacitance Field Effect Transistor

Physical Investigation of Subthreshold Swing Degradation Behavior in Negative Capacitance FET

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Positive-to-negative subthreshold swing of a MOSFET tuned by the ferroelectric switching dynamics of BiFeO3

New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETs

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Physical Insights into the Impact of Internal Metal Gate on the Subthreshold Behavior of NCFET Based on Domain Switching Dynamics

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

Ferroelectric Negative Capacitance Field Effect Transistor

Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials

Experimental Study on the Transient Response of Negative Capacitance Tunnel FET

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

Direct Relationship Between Sub-60 Mv/dec Subthreshold Swing and Internal Potential Instability in MOSFET Externally Connected to Ferroelectric Capacitor

Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors

A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors

Analytical Drain Current Model for Long-Channel Gate-All-around Negative Capacitance Transistors with a Metal–ferroelectric–insulator–semiconductor Structure

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Channel Doping Effects in Negative Capacitance Field-Effect Transistors

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors