Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

Physical Insights into the Impact of Internal Metal Gate on the Subthreshold Behavior of NCFET Based on Domain Switching Dynamics

Delay and Power Evaluation of Negative Capacitance Ferroelectric Mosfet Based on Spice Model

Physical Investigation of Subthreshold Swing Degradation Behavior in Negative Capacitance FET

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Impacts of Metal Interlayer on Negative Capacitance Transistors

Origin of Steep Subthreshold Swing Within the Low Drain Current Range in Negative Capacitance Field Effect Transistor

Channel Doping Effects in Negative Capacitance Field-Effect Transistors

Investigation of Negative Capacitance Effect from Domain Switching Dynamics

New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETs

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Ferroelectric Negative Capacitance Field Effect Transistor

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Ferroelectric behavior and NCFETs - TCAD Simulation

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors

A Dynamic Current Model for MFIS Negative Capacitance Transistors

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

The Effect of Interface Traps at the Si/SiO2 Interface on the Transient Negative Capacitance of Ferroelectric FETs

Experimental Study on the Transient Response of Negative Capacitance Tunnel FET

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET