Abstract:The current evaluation on negative capacitance ferroelectric MOSFET (NC-FeFET) mostly reports device-level current/capacitance-voltage prediction and approaches with ease of integration in SPICE for circuit level performance prediction are very limited. For benchmarking against intrinsic MOSFET and beyond-CMOS devices, a new Landau-Khalatnikov theory-based SPICE model of ferroelectric is presented as a series connectionof a voltage controlled voltage source and a resistor. It predicts both static and dynamic behaviors by including ferroelectric damping constant. Integration of this ferroelectric model with BSIM4 model of 45-nm CMOS technology allows prediction of circuit-level performance of NC-FeEFT. In currentvoltage characteristics, both subthreshold swing and off-state current are reduced compared with intrinsic MOSFET. For an inverter chain, different values of damping constants give rise to a wide range of propagation delays and power consumptions. Only NC-FeFET using sufficiently low damping constant ferroelectric with similar response time to intrinsic MOSFET can be considered as a low-power device with a similar propagation delay. In this case, its dynamic power is suppressed by the same proportion as that of internal voltage amplification and static leakage power also drops. Our results reveal the ferroelectricswitching time and Landau parameter requirements for FeFET use in low-power circuit applications.

A Dynamic Current Model for MFIS Negative Capacitance Transistors

Delay and Power Evaluation of Negative Capacitance Ferroelectric Mosfet Based on Spice Model

Channel Doping Effects in Negative Capacitance Field-Effect Transistors

Analytical Drain Current Model for Long-Channel Gate-All-around Negative Capacitance Transistors with a Metal–ferroelectric–insulator–semiconductor Structure

An Improved Model for the Surface Potential and Drain Current in Negative Capacitance Field Effect Transistors

Modeling Multigate Negative Capacitance Transistors with Self-Heating Effects

Design of Negative Capacitance Tunneling Field Effect Transistor with Dual-Source U-shape Channel, Super-Steep Subthreshold Swing and Large On-State Current

A Carrier-Based Analytical Theory for Negative Capacitance Symmetric Double-Gate Field Effect Transistors and Its Simulation Verification

Negative-Capacitance FET With a Cold Source

Analytical drain current model for long-channel double-gate negative capacitance junctionless transistors using Landau theory

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors

Modeling of Ionizing Radiation Effects for Negative Capacitance Field-Effect Transistors

Physical Insights into the Performances of Negative Capacitance Field Effect Transistors Using Single-Domain Versus Multidomain Models

Effect of depolarization field on steep switching characteristics in negative capacitance field effect transistors

An Analytical Charge-Sheet Drain Current Model For Monolayer Transition Metal Dichalcogenide Negative Capacitance Field-Effect Transistors

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Physical Insights into the Impact of Internal Metal Gate on the Subthreshold Behavior of NCFET Based on Domain Switching Dynamics

Simulation-Based Study of Negative Capacitance Double-Gate Junctionless Transistors with Ferroelectric Gate Dielectric

Role of Interfacial Traps at SiO<sub>2</sub>/Si Interface in Negative Capacitance Field Effect Transistor (NCFET) Based on Transient Negative Capacitance (NC) Theory

Surface Potential-Based Compact Model for Negative Capacitance FETs Compatible for Logic Circuit: with Time Dependence and Multidomain Interaction