Polarization Gradient Effect of Negative Capacitance LTFET

Hao Zhang,Shupeng Chen,Hongxia Liu,Shulong Wang,Dong Wang,Xiaoyang Fan,Chen Chong,Chenyu Yin,Tianzhi Gao
DOI: https://doi.org/10.3390/mi13030344
IF: 3.4
2022-02-22
Micromachines
Abstract:In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swing (SS = 18.4 mV/dec) of NC-LTFET is obtained by the mechanism of line tunneling at low gate voltage instead of diagonal tunneling, which is caused by the non-uniform voltage across the gate oxide layer. In addition, we report the polarization gradient effect in a negative capacitance TFET for the first time. It is noted that the polarization gradient effect should not be ignored in TFET. When the polarization gradient parameter g grows larger, the dominant tunneling mechanism that affects the SS is the diagonal tunneling. The on-state current (Ion) and SS of NC-LTFET become worse.
chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
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