Abstract:We study the impact of different interlayers (ILs) and ferroelectric materials on charge trapping during the endurance fatigue of Si ferroelectric field effect transistor (FeFET) with TiN/HfxZr1-xO2/ interlayer/Si (MFIS) gate-stack. We have fabricated FeFET devices with different interlayers (SiO2 or SiON) and HfxZr1-xO2 materials (${x} =0.75$ , 0.6, 0.5) and directly extracted the charge trapping during endurance fatigue. We find that: 1) under the same equivalent oxide thickness (EOT) condition, the increase of dielectric constant and interlayer thickness suppresses charge trapping and improves the endurance characteristics; 2) charge trapping effect is experimentally verified to be the origin of endurance fatigue; and 3) as the spontaneous polarization (${P}_{\text {s}}{)}$ of the HfxZr1-xO2 decreases from $25.9~ \boldsymbol {\mu } \text{C}$ /cm2 (Hf0.5Zr0.5O2) to $20.3~ \boldsymbol {\mu } \text{C}$ /cm2 (Hf0.6Zr0.4O2), the charge trapping behavior decreases, resulting in the slow degradation rate of memory window (MW) during program/erase cycling; in addition, when ${P}_{\text {s}}$ further decreases to $8.1~ \boldsymbol {\mu }\text{C}$ /cm2 (Hf0.75Zr0.25O2), the initial MW nearly disappears (only ~0.02 V). Thus, the reduction of ${P}_{\text {s}}$ could improve endurance characteristics. On the contrary, it can also reduce the MW. Our work helps design the MFIS gate-stack to improve endurance characteristics.

A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure

Charge Trapping Effect at the Interface of Ferroelectric/interlayer in the Ferroelectric Field Effect Transistor Gate Stack

Investigation of Charge Trapping Induced Trap Generation in Si FeFET with Ferroelectric Hf0.5Zr0.5O2

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO 2 /Si (MFIS) Gate Structure

Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

The Effect of Interface Traps at the Si/SiO2 Interface on the Transient Negative Capacitance of Ferroelectric FETs

Modeling the Coupled Charge Trapping Dynamics in FeFETs for Reliability Characterizations

Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr 1- x O 2 /Interlayer/Si (MFIS) Gate Structure

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET During Endurance Fatigue by Gate Leakage Current

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics

A Physics-Based Model for Oxide–Semiconductor-Based Ferroelectric Field-Effect Transistors

Trap Generation in Whole Gate Stacks of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure During Endurance Fatigue

Characterizing the Charge Trapping Across Crystalline and Amorphous Si/SiO 2 /hfo 2 Stacks from First-Principle Calculations

Deep insights into the Interplay of Polarization Switching, Charge Trapping, and Soft Breakdown in Metal-Ferroelectric-Metal-Insulator-Semiconductor Structure: Experiment and Modeling

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects