Abstract:Metal-Oxide-Semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO_2 layer were studied for their capacitance characterization. Ge atoms were introduced by implantation of 74Ge+ ions with energy of 150 keV into relatively thick (~640nm) amorphous SiO_2 films. The experimental characterization included room temperature measurements of capacitance-voltage (C-V) dependences at high frequencies (100 kHz and 1 MHz). Four groups of MOS structures have been studied: The 1st - "initial" samples, without Ge atoms (before ion implantation). The 2nd - "implanted" samples, after Ge+ ion implantation but before annealing, with randomly distributed Ge atoms within the struggle layer. The 3rd - samples after formation of Ge nanocrystals by means of annealing at 800 degree C ("NC-Ge" samples), and the 4th - "final" samples: NC-Ge samples that were subjected by an intensive neutron irradiation in a research nuclear reactor with the integral dose up to 10^20 neutrons/cm^2 followed by the annealing of radiation damage. It is shown that in "initial" samples, the C-V characteristics have a step-like form of "S-shape", which is typical for MOS structures in the case of high frequency. However, in "implanted" and "NC-Ge" samples, C-V characteristics have "U-shape" despite the high frequency operation, In addition, "NC-Ge" samples exhibit a large hysteresis which may indicate charge trapping at the NC-Ge. Combination of the "U-shape" and hysteresis characteristics allows us to suggest a novel 4-digits memory retention unit. "Final" samples indicate destruction of the observed peculiarities of C-V characteristics and recurrence to the C-V curve of "initial" samples.

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Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

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Charge Storage in Nitrided Nanocrystalline Silicon Dots

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

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Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Influence of Ge nanocrystals and radiation defects on C-V characteristics in Si-MOS structures

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Scaling Dependence of Memory Windows and Different Carrier Charging Behaviors in Si Nanocrystal Nonvolatile Memory Devices

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

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Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide