Abstract:Metal-Oxide-Semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO_2 layer were studied for their capacitance characterization. Ge atoms were introduced by implantation of 74Ge+ ions with energy of 150 keV into relatively thick (~640nm) amorphous SiO_2 films. The experimental characterization included room temperature measurements of capacitance-voltage (C-V) dependences at high frequencies (100 kHz and 1 MHz).
Four groups of MOS structures have been studied: The 1st - "initial" samples, without Ge atoms (before ion implantation). The 2nd - "implanted" samples, after Ge+ ion implantation but before annealing, with randomly distributed Ge atoms within the struggle layer. The 3rd - samples after formation of Ge nanocrystals by means of annealing at 800 degree C ("NC-Ge" samples), and the 4th - "final" samples: NC-Ge samples that were subjected by an intensive neutron irradiation in a research nuclear reactor with the integral dose up to 10^20 neutrons/cm^2 followed by the annealing of radiation damage.
It is shown that in "initial" samples, the C-V characteristics have a step-like form of "S-shape", which is typical for MOS structures in the case of high frequency. However, in "implanted" and "NC-Ge" samples, C-V characteristics have "U-shape" despite the high frequency operation, In addition, "NC-Ge" samples exhibit a large hysteresis which may indicate charge trapping at the NC-Ge. Combination of the "U-shape" and hysteresis characteristics allows us to suggest a novel 4-digits memory retention unit. "Final" samples indicate destruction of the observed peculiarities of C-V characteristics and recurrence to the C-V curve of "initial" samples.
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to study the influence of germanium nanocrystals (Ge NCs) and radiation defects on the capacitance - voltage (C - V) characteristics of silicon metal - oxide - semiconductor (Si - MOS) structures. Specifically, the author hopes to introduce germanium nanocrystals and subject them to different treatments (such as ion implantation, annealing, and neutron irradiation), observe how these treatments change the C - V characteristics of the MOS structure, and explore their potential applications, especially in high - density storage devices.
### Research Background and Problems
1. **C - V Characteristics of Traditional MOS Structures**
- Traditional MOS structures usually exhibit "S - shaped" C - V characteristics during high - frequency measurement. This is because at high frequencies, minority carriers cannot respond to voltage changes in a timely manner, resulting in a large capacitance difference between the accumulation and depletion regions.
2. **The Influence of Introducing Germanium Nanocrystals**
- The paper studies the influence of these nanocrystals on C - V characteristics by embedding germanium nanocrystals in the silicon dioxide layer. In particular, the author focuses on whether these nanocrystals will cause changes in the shape of the C - V curve and the physical mechanisms behind these changes.
3. **C - V Characteristics of Different Samples**
- The paper studies four groups of samples:
1. **Initial Sample**: A sample without germanium atoms.
2. **Implanted Sample**: A sample that has undergone germanium ion implantation but not annealing.
3. **NC - Ge Sample**: A sample that has undergone annealing to form germanium nanocrystals.
4. **Final Sample**: A sample that has undergone neutron irradiation and then annealing again.
4. **Experimental Results and Findings**
- **Initial Sample**: It exhibits a typical "S - shaped" C - V characteristic.
- **Implanted Sample and NC - Ge Sample**: They exhibit "U - shaped" C - V characteristics, and the NC - Ge sample also shows a large hysteresis phenomenon, which may be related to charge trapping.
- **Final Sample**: After neutron irradiation, the particularity of the C - V characteristics is destroyed and it returns to an "S - shaped" characteristic similar to that of the initial sample.
5. **Potential Applications**
- Combining the "U - shaped" and hysteresis characteristics, the author proposes the possibility of a new type of 4 - bit memory cell. This memory cell can have four fixed voltage values at the same capacitance value, thus providing a new design idea for high - density storage devices.
### Formula Summary
- **Capacitance Formulas**
\[
C_{\text{min}}=\frac{\varepsilon}{d}
\]
\[
C_{\text{max}}=\frac{\varepsilon}{d_1 + d_3}
\]
where \(\varepsilon\) is the dielectric constant of silicon dioxide, \(d\) is the total thickness, \(d_1\) and \(d_3\) are the thicknesses of the pure silicon dioxide layer respectively, and \(d_2\) is the thickness of the working layer containing germanium atoms and defects.
- **Proportional Relationship**
\[
1-\frac{C_{\text{min}}}{C_{\text{max}}}=\frac{d_2}{d}
\]
Through these studies, the author hopes to reveal the influence of germanium nanocrystals and radiation defects on the C - V characteristics of MOS structures and explore their potential applications in high - density storage devices.