Abstract:Silicon carbide (SiC), an important semiconductor material used in high-power devices, faces the problem of gate oxygen layer formation in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO 2 as the gate oxygen layer with a high-k material (ZrO 2 ) so as to investigate its effect on the electrical characteristics of the appliance. In particular ZrO 2 films were deposited on SiC and Si substrates by atomic layer deposition (ALD), and Al was used as the electrode. The atomic force microscopy (AFM) microregion scan revealed a highly flat surface with Rq<1 nm after the ALD growth of ZrO 2 layer. The sample surface analysis via X-ray photoelectron spectroscopy (XPS) suggested the presence of a small amount of ZrO x components. According to the electron energy loss spectrum (EELS), the band gap width (Eg) of this ALD ZrO 2 dielectric was 5.45 eV, which met the requirements for high-quality 4H-SiC-related MOS devices. The electrical properties of the samples were then studied, and the maximum breakdown electric field of the MOS capacitor structure on the SiC substrate was obtained to be more than 10 MV/cm, i.e., nearly twice that of the Si substrate. Based on capacitance-voltage (C-V) measurements, the interface defect density (Dit) near the conduction band of the MOS capacitive structure of the SiC substrate was only on the order of 10 12 eV -1 cm -2 . The movable charge Neffof the oxide layer was also controlled at 10 12 cm -2 . Therefore, the overall performance of the ZrO 2 /SiC structure in terms of electrical properties exceeds that of the ZrO 2 /Si structure and previously reported counterparts. Thus, the combination of the high-k material (ZrO 2 ) and SiC as the substrates in MOS capacitor structures is a very promising research direction.

Structure and Electric Property Comparison Between Ge Nanoclusters Embedded in Al2o3 and Al2o3/Zro2

Structural and Electrical Characteristics of Ge Nanoclusters Embedded in Al2o3 Gate Dielectric

Memory and Negative Photoconductivity Effects of Ge Nanocrystals Embedded in ZrO2/Al2O3 Gate Dielectrics

Investigation of Ge Nanocrytals in a Metal-Insulator-semiconductor Structure with a HfO2∕SiO2 Stack As the Tunnel Dielectric

Influence of Ge nanocrystals and radiation defects on C-V characteristics in Si-MOS structures

Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Optical Absorption and Charging Effect in Nano-Crystalline Ge/SiNx Multilayers

Towards Understanding Hole Traps and NBTI of Ge/GeO2/Al2O3 Structure

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Dielectric Engineering of Ge Nanocrystal/Sio2 Nanocomposite Thin Films with Ge Ion Implantation: Modeling and Measurement

Room Temperature Si Δ-Growth on Ge Incorporating High-K Dielectric for Metal Oxide Semiconductor Applications

Effect of Annealing on Charge Transfer in Ge Nanocrystal Based Nonvolatile Memory Structure

Leakage current mechanism and effect of Y 2 O 3 doped with Zr high-K gate dielectrics

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Algan/Gan Mos Transistors Using Crystalline Zro2 As Gate Dielectric

Electronic Properties of ZrO2 Films Fabricated via Atomic Layer Deposition on 4H-SiC and Si Substrates

Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

Electrical and dielectric properties of ferromagnetic GeMn nanocrystals embedded in metal-oxide-semiconductor Schottky diodes (Al/SiO 2 :GeMn NCs/n-Si) grown by MBE

Charging effect of Al2O3 thin films containing Al nanocrystals