Characterization of Cubic Phase MgZnO/Si(1 0 0) Interfaces

NB Chen
DOI: https://doi.org/10.1016/j.apsusc.2005.02.038
IF: 6.7
2005-01-01
Applied Surface Science
Abstract:The microstructural properties of the MgxZn1−xO/Si(100) interface were investigated using transmission electron microscopy (TEM) and chemical states of the heterostructure were studied by high resolution X-ray photoelectron spectroscopy (XPS). By analyzing the valence band spectra of thin MgxZn1−xO/Si(100) heterostructures, the valence band offset between such Mg0.55Zn0.45O and Si(100) was obtained to be 2.3eV. Using the cubic ternary thin films as insulators, metal–insulator–semiconductor (MIS) capacitors have been fabricated. Leakage current density lower than 3×10−7A/cm2 is obtained under the electrical field of 600kV/cm by current–voltage (I–V) measurement. Frenkel-Poole conduction mechanism is the main cause of current leakage under high electrical field.
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