Fabrication of Si/Si1-Xgex Waveguide Wdm Components
DX Xu,S Janz,R Williams,E Allegretto,S Mailhot,JJ He,JM Baribeau,H Lafontaine,J Stapledon,JW Fraser,M Robillard,P Jessop,S Kovacic
DOI: https://doi.org/10.1117/12.273852
1997-01-01
Abstract:The design of manufacturable Si/Si1-xGex waveguide WDM components involves several unique materials and fabrication issues which must be confronted and resolved. Accurate data for the refractive indices of the waveguide materials are essential. Furthermore, the waveguide design is tightly constrained by the requirement that Si/Si1-xGex layer thickness is within the pseudomorphic growth limit. By combining refractive indices determined from mode profile measurements of MBE and CVD grown waveguides, and epilayer thickness constraints set by the pseudomorphic growth limits, we have determined a set of design criteria for Si/Si1-xGex waveguides for WDM and optical signal routing applications.Optically smooth and vertical Si/Si1-xGex waveguide facets are critical in permitting highly efficient coupling between the fiber and the Si chip. Since Si has an equal probability of cleaving along either the < 110 > or < 111 > planes, producing such high quality facets consistently is extremely challenging. We have demonstrated that high quality facets can be obtained consistently by cleaving, with and without a dielectric layer on Si substrates.